Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing-Reference-Cited by-同舟云学术

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Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing

Published:1997-02 Issue:3 Volume:122 Page:571-574
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kachurin G.A.,Tyschenko I.E.,Zhuravlev K.S.,Pazdnikov N.A.,Volodin V.A.,Gutakovsky A.K.,Leier A.F.,Skorupa W.,Yankov R.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Annealing characteristics of Si‐rich SiO2films

2. Thermodynamical size effect and the structure of metallic clusters

3. Premelting of thin wires

4. A thermodynamic criterion of the crystalline-to-amorphous transition in silicon

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