Growth of Ultrafine Si embedded SiO 2 Nanowires by Pt catalyst

Abstract

Abstract Ultrafine Si embedded SiO2 nanowires have been prepared by thermal evaporation using Pt catalyst. The ultrafine Si embedded SiO2 nanowires with a diameter of about 10 nm were grown in-situ on the Si substrate, conforming to a vapor-liquid-solid growth mechanism. On account of the existence of the quantum confinement effect, the absorption edge of the ultrafine Si embedded SiO2 nanowires is slightly larger. The photoluminescence result reveals a blue shift in the ultrafine nanowires, which may be due to the macroscopic behavior of the sample becomes more relevant and the typical surface plasmon absorption band appears. The Pt-related light emission characteristics will enable the development of nanowires in the field of optoelectronics.