Formation of heavily doped semiconductor layers by pulsed ion beam treatment-Reference-Cited by-同舟云学术

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Formation of heavily doped semiconductor layers by pulsed ion beam treatment

Published:1997-01 Issue:1 Volume:122 Page:35-38
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Bayazitov R.M.,Zakirzyanova L.Kh.,Khaibullin I.B.,Remnev G.E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Ion beam annealing of semiconductors

2. Pulsed ion-beam melting of silicon

3. Pulse ion implantation - new single step doping technique

4. Comparative status of pulsed ion implantation

5. Pulsed particle beam treatment of implanted silicon

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation;Vacuum;2020-12

2. Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates;Russian Microelectronics;2018-09

3. Characteristics of Pulsed Heavy Ion Beam Generated in Bipolar Pulse Accelerator;Electronics and Communications in Japan;2016-08-12

4. Characteristics of Pulsed Heavy Ion Beam Generated in Bipolar Pulse Accelerator;IEEJ Transactions on Fundamentals and Materials;2015

5. Lifetime of anode polymer in magnetically insulated ion diodes for high-intensity pulsed ion beam generation;Review of Scientific Instruments;2007-02

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