Platinum silicides formation on heavily doped silicon by ion mixing-Reference-Cited by-同舟云学术

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Platinum silicides formation on heavily doped silicon by ion mixing

Published:1987-01 Issue: Volume:19-20 Page:749-752
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Vasiljev S.V.,Gerasimenko N.N.,Kalinin V.V.,Kulikauskas V.S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. Atomic motion of dopant during interfacial silicide formation

2. 2 All Union Conf. on Physics and Technology of Thin Films;Gerasimenko,1984

3. Impurity effects in transition metal silicides

4. Growth kinetics and diffusion mechanism inPd2Si

5. Ion Implantation;Ryssel,1983

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Energy Ion Bombardment of Thin Films: From Platinum on Silicon to Platinum Silicide;Journal of The Electrochemical Society;2014

2. Growth kinetics of CoSi formed by ion beam irradiation at room temperature;Journal of Applied Physics;1997-12

3. In-situ analysis during ion beam modification of Pt-Si structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07

4. Processes in implanted silicon stimulated by silicidation reactions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03

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