Growth kinetics of CoSi formed by ion beam irradiation at room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366460
Reference17 articles.
1. Platinum silicides formation on heavily doped silicon by ion mixing
2. The structural and electrical properties of ion-beam mixed tungsten silicides
3. Titanium Silicide Formation on Boron‐Implanted Silicon
4. Growth of titanium silicide on ion‐implanted silicon
5. Interactions in the Co/Si thin‐film system. I. Kinetics
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3. Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-05
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