Ti Silicide formation using as ion beam mixing-Reference-Cited by-同舟云学术

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Ti Silicide formation using as ion beam mixing

Published:1987-01 Issue: Volume:19-20 Page:746-748
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yu Ning,Zhou Zuyao,Zhou Wei,Tsou Shichang,Zhu Dezhang

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Silicide for VLSI Applications;Murarka,1983

2. Thin film interaction between titanium and polycrystalline silicon

3. Kinetics of TiSi2formation by thin Ti films on Si

4. Refractory metal silicide formation induced by As+implantation

5. Ion-beam-induced silicide formation in nickel thin films on silicon

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam induced surface and interface engineering;Surface Science Reports;2011-03

2. High current metal-ion implantation to fabricate metal silicides;Surface and Coatings Technology;2000-09

3. Metal silicides synthesized by high current metal–ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

4. Refractory metal silicides synthesized by metal vapor vacuum arc ion source implantation;Journal of Applied Physics;1995-04-15

5. Metal Vapour Vacuum Arc Ion Source to Synthesize Refractory Metal Silicides;MRS Proceedings;1993

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