Damage created in silicon by BFn+ (1≤ n ≤ 3) and PFn+ (1⪯ n:≤ 5) implantations
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
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1. Nonlinear effects in collision cascades and high energy shock waves during ta-C:H growth;Journal of Applied Physics;2007-07
2. Accumulation of structural defects in silicon irradiated with PF n + cluster ions with medium energies;Semiconductors;2007-01
3. Amorphous pocket model for silicon based on molecular dynamics simulations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
4. Status and open problems in modeling of as-implanted damage in silicon;Materials Science in Semiconductor Processing;2003-02
5. Damage creation in silicon single crystals irradiated with 200 keV/atom clusters;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04
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