Author:
Donovan E.P.,Brighton D.R.,Hubler G.K.,van Vechten D.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Ion Implantation in Semiconductors;Borders,1971
2. Refractive index profiles and range distributions of silicon implanted with high‐energy nitrogen
3. Optical effects resulting from deep implants of silicon with nitrogen and phosphorus
4. E.P. Donovan, D.R. Brighton, D. Van Vechten and G.K. Hubler, to appear in vol. 71 of the MRS Symposia Proceedings Series.
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33 articles.
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