Transient enhanced diffusion and electrical activation of As in Si during rapid thermal annealing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Production of shallow ion-implanted layers using rapid electron-beam annealing under the condition of transient-enhanced outdiffusion;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
2. Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic;Journal of The Electrochemical Society;1999-08-01
3. Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon;MRS Proceedings;1996
4. Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon;MRS Proceedings;1996
5. Investigation of AsO clustering in si;Physica Status Solidi (a);1989-06-16
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