Redistribution and activation of ion implanted As in Si during RTA for concentrations around solid solubility
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. On models of phosphorus diffusion in silicon
2. Rapid thermal annealing of arsenic and boron‐implanted silicon
3. Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon
4. Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
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3. Effect of composition and annealing on structural defects in high-dose arsenic-implanted Si1−xGex alloys;Journal of Applied Physics;1998-10-15
4. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals;Rapid Thermal Processing of Semiconductors;1997
5. Rapid thermal annealing of arsenic‐implanted Si0.6Ge0.4 alloys: Temperature effects;Applied Physics Letters;1996-01-29
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