Author:
Umirzakov B.E.,Pugacheva T.S.,Tashatov A.T.,Tashmukhamedova D.A.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
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2. The influence of alkali atoms implanted in silicon on the negative secondary ion emission
3. Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon
4. F.G. Jurabekova, T.S. Pugacheva, D. Tashmuhamedova, B.E. Umirzakov, Izv. RAN, Ser. Phys. 62 (1998) 1455
5. S.P. Murarka, Silicides for VLSI Applications, Academic Press, New York 1983, p. 174
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