The influence of alkali atoms implanted in silicon on the negative secondary ion emission-Reference-Cited by-同舟云学术

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The influence of alkali atoms implanted in silicon on the negative secondary ion emission

Published:1984-07-16 Issue:1 Volume:84 Page:269-272
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Frentrup W.,Griepertrog M.,Klose H.,Kreysch G.,Müller-Jahreis U.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Evaluation of a cesium positive ion source for secondary ion mass spectrometry

2. Interaction of cesium and oxygen on W(110)

3. Interaction of cesium and oxygen on W(110)

4. and , Proc. 3rd Internat. Conf. Secondary Ion Mass Spectrometry, Budapest, August 30 to September 5, 1981 (p. 151).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05

2. Survey of Alkali Primary Ion Sources for SIMS;Springer Series in Chemical Physics;1986

3. Negative Secondary Ion Emission Influenced by Alkali Atoms;physica status solidi (a);1985-10-16

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