Implant isolation in GaAs device technology: Effect of substrate temperature-Reference-Cited by-同舟云学术

Implant isolation in GaAs device technology: Effect of substrate temperature

Published:2002-04 Issue:1-4 Volume:188 Page:196-200
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ahmed S.,Gwilliam R.,Sealy B.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

2. B.J. Sealy, Properties of Gallium Arsenide, Third ed., in: M.R. Brozel, G.E. Stillman (Eds.), INSPEC, IEE, 1996, 763

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