Modeling of Ge nanocluster evolution in ion-implanted SiO2 layer
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
2. Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation
3. Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films
4. V.A. Borodin, K.-H. Heinig, to be published
5. Generalized rate theory for spatially inhomogeneous systems of point defect sinks
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1. Influence of oxygen co-implantation on germanium out-diffusion and nanoclustering in SiO2/Si films;Thin Solid Films;2022-03
2. 18O(p,α)15N isotopic tracing of germanium diffusion in SiO2/Si films;Journal of Applied Physics;2021-09-14
3. Fabrication and Thermal Budget Considerations of Advanced Ge and InP SOLES Substrates;ECS Journal of Solid State Science and Technology;2015
4. Materials Processing;Ion Beams in Materials Processing and Analysis;2012
5. COMPOSITES OF THE TITANIA THIN FILMS IMPLANTED BY Ge AND Si;International Journal of Modern Physics B;2011-05-10
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