COMPOSITES OF THE TITANIA THIN FILMS IMPLANTED BY Ge AND Si

Abstract

By using reactive magnetron sputtering system, titanium dioxide thin films were fabricated onto quartz substrate, and then modified by Ge and Si atoms that were introduced with ion implantation method. XRD, AFM, XPS, and UV-vis were used to characterize these films, and X-ray photoelectron spectroscopy (XPS) was adopted to examine the atomic chemical states of implanted titanium dioxide thin films. The results show that there are Ge and silicon oxides precipitations in TiO 2 matrices. The implanted Ge + Si thin film exhibits an intense absorption band within visible region, which will further benefit its practical applications.