Author:
Smirnov V.K.,Kibalov D.S.,Krivelevich S.A.,Lepshin P.A.,Potapov E.V.,Yankov R.A.,Skorupa W.,Makarov V.V.,Danilin A.B.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. See works of G. Carter and coworkers, Journal of Material Science and Surface Science in 70s; see e.g. G. Carter, M. Nobes, K. Arkshak, Wear 53 (1979) 245; R. Smith, T. Valkering, J. Walls, Phil. Mag. A 44 (4) (1981) 879; J. Ducommun et al., J. Material Science 10 (1975) 52; G. Carter et al., 8 (1973) 1473; R. Smith, J. Walls, Surface Science 80 (1979) 557
2. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment
3. E.H. Cirlin, J.J. Vajo, in: A. Benninghoven et al. (Ed.), Proceedings of The Eighth International Conference on Secondary Ion Mass Spectrometry (SIMS VIII), Wiley, Chichester, 1992, p. 347
4. Quantitative investigation of the O2+-induced topography of GaAs and other III-V semiconductors: An STM study of the ripple formation and suppression of the secondary ion yield change by sample rotation
5. Influence of the composition of the altered layer on the ripple formation
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