Synthesis of group IV nanocrystals in SiC by ion beam processing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials
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1. Diffusion of fission products and radiation damage in SiC;Journal of Physics D: Applied Physics;2013-10-28
2. Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi;ECS Transactions;2013-03-15
3. Characteristics of Ge Nanodots Embedded in SiC Layer Fabricated on Si(001);Japanese Journal of Applied Physics;2009-08-20
4. Surface Structure with High-Density Nanodots Formed by Pulse Nucleation Method Using Monomethylgermane;Japanese Journal of Applied Physics;2008-07-11
5. Surface Structure Formed by the Reaction of Monomethylgermane on Si(001) Surface;Japanese Journal of Applied Physics;2008-03-14
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