Surface Structure Formed by the Reaction of Monomethylgermane on Si(001) Surface-Reference-Cited by-同舟云学术

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Surface Structure Formed by the Reaction of Monomethylgermane on Si(001) Surface

Published:2008-03-14 Issue:3 Volume:47 Page:1690-1693
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yasui Kanji,Kanemaru Tetsushi,Ogiwara Tomoaki,Nishiyama Hiroshi,Inoue Yasunobu,Akahane Tadashi,Takata Masasuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Nucleation of Ge quantum dots on the C-alloyed Si(001) surface

2. Growth temperature dependence on the formation of carbon-induced Ge quantum dots

3. Effect of submonolayer carbon on nanoscale Ge dot growth on Si( 001 ) substrates

4. Ge growth mode modification on carbon-induced Si(001)-c(4×4) surfaces

5. Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi;ECS Transactions;2013-03-15

2. Characteristics of Ge Nanodots Embedded in SiC Layer Fabricated on Si(001);Japanese Journal of Applied Physics;2009-08-20

3. Surface Structure with High-Density Nanodots Formed by Pulse Nucleation Method Using Monomethylgermane;Japanese Journal of Applied Physics;2008-07-11

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