Dose-rate influence on the defect production in MeV proton-implanted float-zone and epitaxial n-type silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
1. Localized lifetime control in insulated-gate transistors by proton implantation
2. Production of Fast Switching Power Thyristors by Proton Irradiation
3. The influence of ion flux on defect production in MeV proton‐irradiated silicon
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon
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2. Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons;Journal of Instrumentation;2015-03-20
3. Suppression of reverse recovery surge voltage of silicon power diode by adjusting trap energy levels through local lifetime control;Japanese Journal of Applied Physics;2014-01-01
4. Role of the rate factor in the hardness testing of β-irradiated silicon single crystals;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2012-04
5. Influence of low-intensive beta-irradiation on phase transformations in silicon at microindentation;Russian Physics Journal;2011-12-28
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