Mixing of metals in Si with 4.5 MeV Au ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference24 articles.
1. Effect of Kr+-mixing and thermal treatment on Co-silicide formation
2. Ion beam mixing of Fe thin film and Si substrate
3. An overview of the ion beam mixing rates in Pd/Si bilayers versus the temperature and deposited energy
4. Ion beam mixing in amorphous silicon I. Experimental investigation
5. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
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1. Investigation of the residual stress in reaction-bonded SiC under irradiation;Journal of the European Ceramic Society;2016-12
2. Swift heavy ion-induced interface mixing in a Si–Nb thin film system;Radiation Effects and Defects in Solids;2011-09
3. Quantification of the mixing effect in silicon–manganese thin films by swift heavy ion irradiation;Journal of Physics D: Applied Physics;2008-08-29
4. Mixing of Au in Si induced by secondary and high-order recoil implantation;Radiation Effects and Defects in Solids;2005-09
5. Schottky barrier height measurement of swift heavy ion intermixed Ni–Silicide interface;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-09
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