Effect of Kr+-mixing and thermal treatment on Co-silicide formation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Silicides for VLSI Applications;Murarka,1983
2. Thin Films — Interdiffusion and Reactions;Tu,1978
3. Interactions in the Co/Si thin‐film system. I. Kinetics
4. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
5. Ion-beam-induced intermixing of surface layers
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1. Phase formation by ion beam mixing in the Ti/Si multilayer system;Applied Surface Science;2006-03
2. Formation of Ni2Si silicide in Ni/Si bilayers by ion beam mixing;Vacuum;2005-01
3. Mixing of metals in Si with 4.5 MeV Au ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-05
4. Thin CoSi2Formation on SiO2with Low-Energy Ion Irradiation;Japanese Journal of Applied Physics;1998-11-15
5. Growth kinetics of CoSi formed by ion beam irradiation at room temperature;Journal of Applied Physics;1997-12
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