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Observation of transient current induced in silicon carbide diodes by ion irradiation

  • Published:2003-05 Issue: Volume:206 Page:979-983
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ohshima Takeshi,Lee Kin K.,Onoda Shinobu,Kamiya Tomihiro,Oikawa Masakazu,Laird Jamie S.,Hirao Toshio,Itoh Hisayoshi

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimum structures for gamma-ray radiation resistant SiC-MOSFETs;physica status solidi (a);2017-02-06

2. Structural and defects induced phenomena in γ-rays irradiated 6H-SiC;Radiation Physics and Chemistry;2016-10

3. Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions;IEEE Transactions on Nuclear Science;2007-12

4. Decrease of Charge Collection Due to Displacement Damage by Gamma Rays in a 6H-SiC Diode;IEEE Transactions on Nuclear Science;2007-12

5. Characterization of charge generated in silicon carbide n+p diodes using transient ion beam-induced current;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2005-04
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