Theoretical formulation for calculating lateral spread of implanted ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Ion Implantation in Semiconductors;Bower,1970
2. Longitudinal and transverse moments of the distribution of MeV Ti ions implanted in Si measured by SIMS
3. New projected range algorithm as derived from transport equations
4. J.P. Biersack, personal communications (1997).
5. Energy losses of ions implanted in matter
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Depth profiles of MeV heavy ions implanted into Si and lithium triborate;NUCL INSTRUM METH B;2004
2. Measurement of lateral straggling using a microbeam;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-07
3. Longitudinal and lateral distributions of medium energy heavy ions in some semiconductor films;Materials Science and Engineering: B;2001-01
4. A Study of Longitudinal and Transversal Range Parameters of Ion-Implanted 40–360 keV Molybdenum in Silicon;Japanese Journal of Applied Physics;1999-01-15
5. Lateral Spread of Tungsten Ions Implanted in Silicon;Japanese Journal of Applied Physics;1998-03-15
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