Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire-Reference-Cited by-同舟云学术

Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire

Published:2000-05 Issue: Volume:166-167 Page:183-187
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Alves E,da Silva M.F,Soares J.C,Monteiro T,Soares J,Santos L

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. High-gain erbium-doped traveling-wave fiber amplifier

2. Erbium implanted thin film photonic materials

3. G.N. van den Hoven, Ph.D. Thesis, FOM-Institute for Atomic and Molecular Physics, Amsterdam, 1996

4. P. Villards, L.D. Calvert, Pearson's Handbook of Crystallographic Data for Intermetallic Phases, American Society for Metals, Metals Park, OH, 1986

5. Lattice site and photoluminescence of erbium implanted in α–Al2O3

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