Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions-Reference-Cited by-同舟云学术

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Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions

Published:2016-07 Issue: Volume:379 Page:91-94
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Tardío M.,Egaña A.,Ramírez R.,Muñoz-Santiuste J.E.,Alves E.

Funder

Spanish MINECO

CRUP

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. On the mechanism for dose rate dependence of stationary luminescence of F and F+ centres excited by electron beam in α-Al2O3

2. Photoluminescence study of swift heavy ion (SHI) induced defect centers in sapphire

3. Conductivity behaviour of Cr implanted TiO2

4. High temperature semiconducting characteristics of magnesium-doped α-Al2O3 single crystals

5. Electrical conductivity in undoped α-Al2O3 crystals implanted with Mg ions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Swift heavy ion irradiation induces enhancement in electrical conductivity of LiTaO3 and LiNbO3 crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-11

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