Low-energy random and channeled H ion ranges in Si: Measurements, simulation, and interpretation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
1. Critical angles and low-energy limits to ion channeling in silicon
2. Experiments and simulations on the effect of channeling on the ranges of 1 keV deuterons in silicon
3. 1 keV hydrogen implantation in a-Si and c-Si: Physical vs computational modeling
4. Visual revelations from silicon ab initio calculations
5. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, New York, 1985
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1. Molecular dynamics for low temperature plasma–surface interaction studies;Journal of Physics D: Applied Physics;2009-09-18
2. Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon;Physical Review B;2007-02-01
3. Ion cutting and transfer of sub-100-nm silicon layers using low-keV H, D, and He ions;Applied Physics Letters;2006-10-09
4. Random and channeling stopping power of H in Si below 100keV;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
5. Some fundamental problems in low-energy ion implantation;Surface and Coatings Technology;2002-07
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