Ion cutting and transfer of sub-100-nm silicon layers using low-keV H, D, and He ions-Reference-Cited by-同舟云学术

Ion cutting and transfer of sub-100-nm silicon layers using low-keV H, D, and He ions

Published:2006-10-09 Issue:15 Volume:89 Page:151922
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Desrosiers Nicholas,Terreault Bernard

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2361182

Reference18 articles.

1. Hydrogen implantation in silicon between 1.5 and 60 kev

2. W. K. Chu, R. H. Kastl, R. F. Lever, S. Mader, and J. Masters, in Ion Implantation in Semiconductors, edited by F. Chernov, J. A. Borders, and D. K. Brice (Plenum, New York, 1976), p. 483.

3. Silicon on insulator material technology

4. The generic nature of the Smart-Cut® process for thin film transfer

5. GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding

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