Identification of deep bandgap states in 4H- and 6H-SiC by radio-tracer DLTS and PAC-spectroscopy-Reference-Cited by-同舟云学术

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Identification of deep bandgap states in 4H- and 6H-SiC by radio-tracer DLTS and PAC-spectroscopy

Published:1998-03 Issue: Volume:136-138 Page:756-762
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Achtziger N.,Forkel-Wirth D.,Grillenberger J.,Licht T.,Witthuhn W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Semi‐insulating 6H–SiC grown by physical vapor transport

2. Point defects in silicon carbide

3. Band gap states of Ti, V, and Cr in 4H–silicon carbide

4. Band gap states of V and Cr in 6H-silicon carbide

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Computational study of first-row transition metals in monodoped 4H-SiC;Modelling and Simulation in Materials Science and Engineering;2021-05-20

2. Lattice location study of low-fluence ion-implanted 124In in 3C-SiC;Journal of Applied Physics;2019-06-07

3. Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts;The European Physical Journal Applied Physics;2019-01

4. Nuclear Methods to Study Defects and Impurities in Si Materials;Defects and Impurities in Silicon Materials;2015

5. Electrical Measurement of the Vanadium Acceptor Level in 4H- and 6H-SiC;MRS Proceedings;2006

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