Experimental test of the single adatom exchange model in surfactant-mediated growth of Ge on Si(100)-Reference-Cited by-同舟云学术

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Experimental test of the single adatom exchange model in surfactant-mediated growth of Ge on Si(100)

Published:1998-03 Issue: Volume:136-138 Page:804-809
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Bailes A.A.,Boshart M.A.,Seiberling L.E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Surfactants in epitaxial growth

2. Local dimer exchange in surfactant-mediated epitaxial growth

3. Diffusion and dimer exchange in surfactant-mediated epitaxial growth

4. Site Exchange of Ge and Sb on Si(100) during Surfactant-Mediated Epitaxial Growth

5. Single Adatom Exchange in Surfactant-Mediated Epitaxial Growth

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sb-surfactant-mediated growth of Si and Ge nanostructures;Physical Review B;2004-04-15

2. X-ray standing wave study of Si/Ge/Si() heterostructures grown with Bi as a surfactant;Surface Science;2003-04

3. Impact-parameter dependent energy loss of screened ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04

4. Impact-parameter dependence of the electronic energy loss of fast ions;Physical Review A;1998-11-01

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