Fabrication and characterization of gridded Pt/SiO2/Si MOS structure for hydrogen and hydrogen sulphide sensing
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference32 articles.
1. A hydrogen‐sensitive Pd‐gate MOS transistor
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3. Hydrogen sensitive mos-structures
4. Integrated CCD transversal filter matched to a pair of 16-bit complementary series
5. Trench Pd/Si metal‐oxide‐semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor
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