Energy gaps and optical properties for the quaternary AlxGayIn1−x−yN matched to GaN substrate
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference28 articles.
1. Group III nitride semiconductors for short wavelength light-emitting devices
2. III–nitrides: Growth, characterization, and properties
3. Effect of nitrogen concentration on electronic energy bands of Ga1−xInxNyAs1−y alloys
4. Band parameters for nitrogen-containing semiconductors
5. S. Nakamura, G. Fasol, Springer, Berlin 1997.
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