Structure and improved electrical properties of Pr-doped PbZrO3 antiferroelectric thin films with (111) preferential orientation
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Antiferroelectric PbZrO3 thin films prepared by multi‐ion‐beam sputtering
2. Microstructure and electrical properties of (120)O-oriented and of (001)O-oriented epitaxial antiferroelectric PbZrO3 thin films on (100) SrTiO3 substrates covered with different oxide bottom electrodes
3. Large strain and high energy storage density in orthorhombic perovskite (Pb0.97La0.02)(Zr1−x−ySnxTiy)O3 antiferroelectric thin films
4. Giant Electrocaloric Effect in Thin-Film PbZr 0.95 Ti 0.05 O 3
5. Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films
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