Co-sputtered Cu(Ti) thin alloy film for formation of Cu diffusion and chip-level bonding-Reference-Cited by-同舟云学术

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Co-sputtered Cu(Ti) thin alloy film for formation of Cu diffusion and chip-level bonding

Published:2018-06 Issue: Volume:211 Page:17-22
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Lin Po Chen,Chen Hao,Hsieh Hsien-Chien,Tseng Tsan-Hsien,Lee Hsin Yi,Wu Albert T.

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Analytical modeling and characterization of deep-submicrometer interconnect;Sylvester;Proc. IEEE,2001

2. System-level performance evaluation of three-dimensional integrated interconnect;Rahman;IEEE Trans. VLSI Syst.,2000

3. International Technology Roadmap for Semiconductors;Semicond. Ind. Assoc.,2001

4. 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and system-on-chip integration;Banerjee;Proc. IEEE,2001

5. Low temperature bonding technology for 3-D integration;Ko;Microelectron. Reliab.,2012

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1. Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect;Coatings;2024-01-03

2. Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading;Materials;2023-01-03

3. Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization;Coatings;2022-04-29

4. Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes;Journal of Electronic Materials;2022-03-02

5. Ti–Cu Coatings Deposited by a Combination of HiPIMS and DC Magnetron Sputtering: The Role of Vacuum Annealing on Cu Diffusion, Microstructure, and Corrosion Resistance;Coatings;2020-11-05

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