Effect of surface orientation on reactive wetting of sapphire by Al–Ti alloys at 1273 K
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference38 articles.
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3. Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers;Crystal Growth & Design;2023-12-19
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