Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments-Reference-Cited by-同舟云学术

Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments

Published:2011-12 Issue:1-2 Volume:131 Page:262-267
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Chang Yao-Feng,Feng Li-Wei,Chang Ting-Chang

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

2. Nanoscale Memory Elements Based on Solid-State Electrolytes

3. A new filamentary model for voltage formed amorphous oxide films

4. Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures

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