Low pressure MOCVD of Er2O3 and Gd2O3 films
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Beyond the conventional transistor
2. Dielectric constants of binary rare-earth compounds
3. Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon
4. Structural properties and electrical characteristics of electron-beam gun evaporated erbium oxide films
5. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
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2. Radio frequency power controlled Gd2O3 crystal phase transition from monoclinic to cubic;Thin Solid Films;2022-01
3. CF-LIBS analysis in depth profile of lithium corrosion resistance of Er2O3 coatings prepared by sol-gel method;Fusion Engineering and Design;2021-09
4. Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors;Journal of Alloys and Compounds;2021-05
5. High-k erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor;Nanotechnology;2021-03-03
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