Defect-induced reversible ferromagnetism in Fe-doped ZnO semiconductor: An electronic structure and magnetization study-Reference-Cited by-同舟云学术

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Defect-induced reversible ferromagnetism in Fe-doped ZnO semiconductor: An electronic structure and magnetization study

Published:2010-10 Issue:2-3 Volume:123 Page:678-684
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Samariya Arvind,Singhal R.K.,Kumar Sudhish,Xing Y.T.,Alzamora Mariella,Dolia S.N.,Deshpande U.P.,Shripathi T.,Saitovitch Elisa B.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Material Design for Transparent Ferromagnets with ZnO-Based Magnetic Semiconductors

2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

3. Making Nonmagnetic Semiconductors Ferromagnetic

4. Transition from ferromagnetism to diamagnetism in undoped ZnO thin films

5. Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO

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