Influences of surface polarity and Pd ion implantation on the wettability of Al-12Si(-2 Mg)/SiC systems-Reference-Cited by-同舟云学术

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Influences of surface polarity and Pd ion implantation on the wettability of Al-12Si(-2 Mg)/SiC systems

Published:2018-06 Issue: Volume:211 Page:329-334
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Huang Zhikun,Liu Huan,Liu Guiwu,Wang Tingting,Zhang Xiangzhao,Wu Jian,Wan Yiguo,Qiao Guanjun

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Six Talent Peaks Project of Jiangsu Province

333 talents project of Jiangsu province

Innovation/Entrepreneurship Program of Jiangsu Province

Qing Lan Project

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Status of silicon carbide (SiC) as a wide-band gap semiconductor for high-temperature applications: a review;Casady;Solid State Electron,1996

2. Handbook of Condensed Mater and Materials Data;Martienssen,2005

3. Silicon carbide as a new MEMS technology;Sarro;Sens. Actuators A. Phys.,2008

4. Surface characterization of Mo-implanted 6H–SiC by high temperature non-reactive wetting tests with the Ni–56Si alloy;Zhao;Ceram. Int.,2014

5. SiC/SiC and SiC/Kovar joining by Ni-Si and Mo interlayers;Liu;J. Mater. Sci.,2010

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