Formation of subsurface cracks in silicon wafers by grinding
Author:
Affiliation:
1. Key Laboratory for Precision and Non-Traditional Machining of Ministry of Education, Dalian University of Technology, Dalian 116024, China
2. College of Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Funder
National Natural Science Foundation of China
Science Fund for Creative Research Groups
Publisher
AIP Publishing
Subject
Automotive Engineering
Reference41 articles.
1. Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining
2. Some experiments on the scratching of silicon:
3. Room-temperature InP distributed feedback laser array directly grown on silicon
4. Characterization of recrystallized depth and dopant distribution in laser recovery of grinding damage in single-crystal silicon
5. Subsurface damage in single-crystal silicon due to grinding and polishing
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Subsurface damage in sapphire ultra-precision grinding;Journal of Manufacturing Processes;2024-11
2. Molecular dynamics simulation analysis of energy deposition on the evolution of single crystal silicon defect system;Materials Today Communications;2024-08
3. Dislocation slip mechanism and prediction method during the ultra-precision grinding process of monocrystalline silicon;Materials Science in Semiconductor Processing;2024-07
4. Detection of Microcracks in Cz‐Si Wafer Manufacturing by Photoluminescence Imaging;physica status solidi (a);2024-07
5. High-performance grinding of ceramic matrix composites;Nanotechnology and Precision Engineering;2024-04-26
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3