Honeycomb-like gallium nitride prepared via dual-ion synergistic etching mechanism using amino acid as etchant-Reference-Cited by-同舟云学术

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Honeycomb-like gallium nitride prepared via dual-ion synergistic etching mechanism using amino acid as etchant

Published:2021-06 Issue: Volume:773 Page:138588
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Zhang Zi'ang,Zhang Shaohui,Zhang Long,Liu Zeng,Zhang Haifeng,Chen Jiafan,Zhou Quan,Nie Lifan,Dong Zhaobo,Pan Gebo

Funder

Basic Research Program of Jiangsu Province

Chinese Academy of Sciences Science and Technology Service Network Initiative

Chinese Academy of Sciences

Jiangsu Province Natural Science Foundation

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference21 articles.

1. Wet etching of GaN, AlN, and SiC: a review;Zhuang;Mater. Sci. Eng. R,2005

2. Mesoporous TiO2 single crystals delivering enhanced mobility and optoelectronic device performance;Crossland;Nature,2013

3. Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical properties;Tseng;J. Phys. Chem. C,2014

4. Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions;Rotter;Appl. Phys. Lett.,2000

5. Effects of photoelectrochemical etching of N-polar and Ga-polar gallium nitride on sapphire substrates;Jung;J. Electrochem. Soc.,2010

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2. Etching of Ga₂O₃: an important process for device manufacturing;Journal of Physics D: Applied Physics;2024-09-12

3. Synergistic effect of abrasive friction and glycine on improving chemical mechanical polishing performance of single-crystal GaN substrate;Ceramics International;2024-06

4. Numerical Evaluation of the Elastic Moduli of AlN and GaN Nanosheets;Materials;2024-02-07

5. Surface roughness-controlled foam-like GaN fabricated by the change H2O concentration in ionic liquid etchant solution via photoelectrochemical etching;Journal of Electroanalytical Chemistry;2024-01

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