Strain-induced bandgap engineering in C3N nanotubes
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference26 articles.
1. Ultra high stiffness and thermal conductivity of graphene like C3N
2. C3 N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties
3. Structural characteristics and strain behavior of two-dimensional C3N : First principles calculations
4. Janus MoSSe Nanotubes: Tunable Band Gap and Excellent Optical Properties for Surface Photocatalysis
5. Strain engineering of WS2, WSe2, and WTe2
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