C3 N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties-Reference-Cited by-同舟云学术

C3 N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties

Published:2017-02-27 Issue:16 Volume:29 Page:1605625
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yang Siwei¹,Li Wei¹²,Ye Caichao¹,Wang Gang¹,Tian He³,Zhu Chong¹,He Peng¹,Ding Guqiao¹,Xie Xiaoming¹⁴,Liu Yang⁵,Lifshitz Yeshayahu⁵⁶,Lee Shuit-Tong⁵,Kang Zhenhui⁵,Jiang Mianheng¹⁴

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics; Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences; 865 Changning Road Shanghai 200050 P. R. China

2. Department of Physics and State Key Laboratory of Surface Physics; Fudan University; Shanghai 200433 China

3. Center of Electron Microscopy and State Key Laboratory of Silicon Materials; School of Materials Science and Engineering; Zhejiang University; Hangzhou 310027 P. R. China

4. School of Physical Science and Technology; Shanghai Tech University; Shanghai 200031 P. R. China

5. Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices; Institute of Functional Nano and Soft Materials (FUNSOM); Soochow University; Suzhou 215123 P. R. China

6. Department of Materials Science and Engineering; Technion; Israel Institute of Technology; Haifa 3200003 Israel

Funder

National Science and Technology Major Project Fund

Chinese Academy of Sciences

National Natural Science Foundation of China

Doctoral Program of Higher Education

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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