An MRCI characterization of the low-lying electronic states of the GeB molecule-Reference-Cited by-同舟云学术

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An MRCI characterization of the low-lying electronic states of the GeB molecule

Published:2014-05 Issue: Volume:601 Page:26-32
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

de Oliveira Marcos H.,Pontes Marcelo A.P.,Da Motta Neto Joaquim D.,Ferrão Luiz F.A.,Roberto-Neto Orlando,Machado Francisco B.C.

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference38 articles.

1. Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys

2. Diffusion of boron in germanium at 800–900°C

3. Ab initio investigation of phosphorus and boron diffusion in germanium

4. Amorphous clusters: the electronic structure of Ge clusters with B and Al impurities

5. B activation and clustering in ion-implanted Ge

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A density functional study on geometries, electronic and photo sensitized surface properties of the fullerene-like BGe nanomaterials;Journal of Alloys and Compounds;2020-03

2. The low-lying quartet electronic states of group 14 diatomic borides XB (X = C, Si, Ge, Sn, Pb);Journal of Quantitative Spectroscopy and Radiative Transfer;2018-04

3. The low-lying states of AlC and GaC: Molecular constants, transition probabilities and radiative lifetime;Chemical Physics Letters;2017-11

4. AsCl radical: The low-lying electronic states and the (1)3Π →X 3Σ− electronic transition;Chemical Physics Letters;2015-08

5. Comparative study of small boron, silicon and germanium clusters: BmSin and BmGen (m + n = 2–4);Journal of Molecular Modeling;2015-05-13

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