B activation and clustering in ion-implanted Ge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3091289
Reference26 articles.
1. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
2. Diffusion of Impurities in Germanium
3. Diffusion of ion-implanted boron in germanium
4. Diffusion of boron in germanium at 800–900°C
5. Impurities in Semiconductors
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