Linear photogalvanic effect in two-dimensional PSi photodetector by vacancy- and substitution-doping-Reference-Cited by-同舟云学术

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Linear photogalvanic effect in two-dimensional PSi photodetector by vacancy- and substitution-doping

Published:2024-07 Issue: Volume:846 Page:141332
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Fu Xi^ORCID,Lin Jian,Liang Guangyao,Liao Wenhu,Li Xiaowu,Wu Qinghua,Zeng Hui

Publisher

Elsevier BV

Reference40 articles.

1. Graphene and two-dimensional materials for silicon technology;Akinwande;Nature,2019

2. Recent advances in free-standing two-dimensional crystals with atomic thickness: design, assembly and transfer strategies;Zhang;Chem. Soc. Rev.,2013

3. Two-dimensional semiconductors and transistors for future integrated circuits;Yin;ACS Nano,2024

4. Phosphorene: from theory to applications;Carvalho;Nat. Rev. Mater.,2016

5. Elemental two-dimensional nanosheets beyond graphene;Kong;Chem. Soc. Rev.,2017

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