Investigation of RuO2/4H–SiC Schottky diode contacts by deep level transient spectroscopy
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference17 articles.
1. Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices
2. Experimental and Simulated Results of SiC Microwave Power MESFETs
3. High-densityZrO2andHfO2:Crystalline structures and equations of state
4. Measurement of generation parameters on Ru/HfO2/Si MOS capacitor
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Frequency dependent electrical and dielectric properties of the Au/(RuO2:PVC)/n-Si (MPS) structures;Physica B: Condensed Matter;2023-05
2. Comparative electrical performance and failure analysis of air-annealed ruthenium Schottky contacts on 6H-SiC and 4H-SiC;Journal of the Chinese Advanced Materials Society;2018-10-02
3. Investigation of the structural and electrical properties of air-annealed ruthenium thin films on 6H–SiC at different temperatures;Chinese Journal of Physics;2018-08
4. Ru-Induced Deep Levels in Ru/4H-SiC Epilayer Schottky Diodes by Deep Level Transient Spectroscopy;ECS Journal of Solid State Science and Technology;2015-12-19
5. Solid State Reaction and Operational Stability of Ruthenium Schottky Contact-on-6H-SiC Under Argon Annealing;Journal of Electronic Materials;2015-06-16
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