Investigation of the structural and electrical properties of air-annealed ruthenium thin films on 6H–SiC at different temperatures
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference18 articles.
1. Deep energy levels in RuO2/4H–SiC Schottky barrier structures;Stuchlikova;Appl. Phys. Lett.,2006
2. Investigation of RuO2/4H–SiC Schottky diode contacts by deep level transient spectroscopy;Buc;Chem. Phys. Lett.,2006
3. Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts;Buc;J. Mater. Sci. Mater. Electron.,2008
4. SIMS, RBS and glancing incidence X-ray diffraction studies of thermally annealed Ru/β-SiC interfaces;Roy;Appl. Surf. Sci.,2003
5. Thermal stability of Ru, Pd and Al Schottky contacts to p-type 6H-SiC;Venter;Phys. Status Solidi (c),2004
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