Resistive switching in single vertically-aligned ZnO nanowire grown directly on Cu substrate-Reference-Cited by-同舟云学术

Resistive switching in single vertically-aligned ZnO nanowire grown directly on Cu substrate

Published:2013-06 Issue: Volume:575 Page:112-114
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Dugaiczyk Lars,Ngo-Duc Tam-Triet,Gacusan Jovi,Singh Karandeep,Yang Jonathan,Santhanam Sarnath,Han Jin-Woo,Koehne Jessica E.,Kobayashi Nobuhiko P.,Meyyappan M.,Oye Michael M.

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference25 articles.

1. Memristor-The missing circuit element

2. Memristive switching mechanism for metal/oxide/metal nanodevices

3. Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

4. Probing atomic rearrangement events in resistive switching nanostructures

5. Copper oxide resistive switching memory for e-textile

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