Multiple resistive switching in core–shell ZnO nanowires exhibiting tunable surface states-Reference-Cited by-同舟云学术

Multiple resistive switching in core–shell ZnO nanowires exhibiting tunable surface states

Published:2017 Issue:40 Volume:5 Page:10517-10523
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Porro S.¹²³⁴^ORCID,Risplendi F.¹²³⁴,Cicero G.¹²³⁴,Bejtka K.⁵⁶³⁴,Milano G.¹²³⁴⁵,Rivolo P.¹²³⁴,Jasmin A.¹²³⁴⁵,Chiolerio A.⁵⁶³⁴^ORCID,Pirri C. F.¹²³⁴⁵,Ricciardi C.¹²³⁴

Affiliation:

1. Department of Applied Science and Technology

2. Politecnico di Torino

3. 10129 Torino

4. Italy

5. Center for Sustainable Future Technologies

6. Istituto Italiano di Tecnologia

Abstract

A ZnO nanowires memristor switching between multiple resistance states. The conductivity of nanowires is tuned by changes in ZnO surface states that are induced at ZnO/polymer interfaces by redox reactions guided by an external bias.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC02383A

Reference55 articles.

1. Memristor-The missing circuit element

2. Memristive devices and systems

3. The missing memristor found

4. Resistance switching memories are memristors

5. On Spike-Timing-Dependent-Plasticity, Memristive Devices, and Building a Self-Learning Visual Cortex

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