Optical and electronic bandgap manipulation behaviors of MoS2/TaSe2 van der Waals heterostructures: Experiment and theory-Reference-Cited by-同舟云学术

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Optical and electronic bandgap manipulation behaviors of MoS2/TaSe2 van der Waals heterostructures: Experiment and theory

Published:2020-11 Issue: Volume:758 Page:137926
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Chen Fang-Fang,Ye Yan,Wang Xiang,Zhou Bin,Xu Li-Ping,Jiang Kai,Zhang Jin-Zhong,Hu Zhi-Gao,Chu Jun-Hao

Funder

East China Normal University

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference37 articles.

1. High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping

2. Strong charge-density-wave order of large-area 2D metallic VSe2 nanosheets discovered by temperature-dependent Raman spectra

3. Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p–n vdW Heterostructure

4. Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2Heterostructure Transistors

5. Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen adsorption on TaSe2 monolayer doped with light metals: A DFT study;Vacuum;2022-02

2. The metallic nature of two-dimensional transition-metal dichalcogenides and MXenes;Surface Science Reports;2021-11

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